参数
材料 | Nd: YVO4 |
浓度公差(atm%) | 0.5%, 1.1%, 2.0%, 3.0% |
取向 | A-cut or C-cut |
平行性 | 20〞 |
垂直性 | 5〞 |
表面质量 | 符合MIL-O-13830 B的10/5划痕/凹陷 |
波前失真 | <λ/8 @633nm |
表面平整度 | λ/10@ 633 nm |
通光孔径 | >90% |
倒角 | ≤0.2mm@450 |
尺寸公差 | (W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm) |
(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm) | |
角度公差 | ≤0.5° |
损伤阈值[GW / cm2] | >1 for 1064nm, TEM00, 10ns, 10Hz (AR-涂层) |
涂层 | HR@1064nm+532nm+HT@808nm/AR@1064nm+532nm |
晶体结构 | 锆石四方体,空间群D4h-I4 / amd |
晶格常数 | a=b=7.12, c=6.29 |
密度 | 4.22g/cm3 |
熔点 | 1825 |
导热系数/(W·m-1·K-1 @ 25°C) | 5.2 |
热光学系数(dn / dT) | dno/dT=8.5×10-6/K; dne/dT=2.9×10-6/K |
热膨胀率/(10-6·K-1 @ 25°C) | a = 4.43, c= 11.4 |
硬度(莫氏) | 4~5 |
激光波长 | 1064nm, 1342nm |
偏振激光发射 | π偏振;平行于光轴(c轴) |
泵浦波长 | 808nm |
本征损失 | 0.02cm-1 @1064nm |
二极管泵浦光到光效率 | >60% |
发射截面 | 25×10-19cm2@1064nm |
荧光寿命 | 90 μs (大约 50 μs for 2 atm% Nd 掺杂) @ 808 nm |
增益带宽 | 0.96nm @1064nm |
折光率 | 1.9573(no); 2.1652(ne) @1064nm |
1.9721(no); 2.1858(ne) @808nm | |
2.0210(no); 2.2560(ne) @532nm | |
吸收系数 | 31.4 cm-1 @ 808 nm |
吸收长度 | 0.32 mm @ 808 nm |
增益带宽 | 0.96 nm (257 GHz) @ 1064 nm |
案例
特点
应用
参考文献
新闻
案例
Nd:YVO4晶体案例(一)用于1064 nm 激光器
规格:3×3×5 mm;
镀膜:S1:HR@1064&HT@808nm
S2:AR@1064&AR@808nm
Nd:YVO4晶体案例(二)用于1064 nm 激光器
规格:2×2×0.2 mm;
2面抛光(2mmx2mm);
镀膜:S1:HT@808nm,T=10%@1064nm
S2:HR@808nm、AR@1064nm
Nd:YVO4晶体案例(三)用于1064 nm 激光器
规格:2×2×4 mm;
S1: AR@808 (R<3%) + HR@1064 (R>99.85%);
S2: AR@1064 (R<0.15%) + HR@532 (R>98%)
Nd:YVO4晶体案例(四)
规格: 4(±0.05mm)*4(±0.05mm)*10 (±0.05mm) mm, 4(±0.05mm)*4(±0.05mm)*30 (±0.05mm) mm;
镀膜: AR/AR@808nm & 888nm & 1064nm (3 波长), R<0.2% on 4*4 mm 表面
Nd:YVO4晶体案例(五)用于1064nm激光器
规格:3×3×5 mm;
a-切;
S1&S2: AR@ 808 nm @ 1064 nm
Nd:YVO4晶体案例(六)用于1064nm激光器
规格: 2×2×4 mm;
a-切;
不镀膜
Nd:YVO4晶体案例(七)用于1064nm激光器
规格:3×3×4 mm;
定向:a切,楔角2°;
镀膜: AR@808nm+1064nm+1342nm
特点
- 吸收系数高
- 受激发射截面大
- 吸收带宽
- 损伤阈值高
- 单轴晶体
- 良好的物理和光学性能
应用
参考文献
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