参数
晶体结构 | 立方 |
泊松比 | 0.28 |
厚度/直径公差 | ±0.05mm |
方向公差 | < 0.5° |
表面平整度 | <λ/8@632nm |
波前失真 | <λ/4@632nm |
表面质量 | 10-5(MIL-O-13830A) |
平行性 | 30〞 |
垂直性 | 15ˊ |
通光孔径 | >90% |
倒角 | <0.2×45° |
熔点 | 1520 ºC |
热膨胀系数 @20ºC | 1.5×10-6/ºC |
导热系数。 @20ºC | 14 W/m/ºK |
比热 | 0.79 J/g K |
密度 | 5.27 g/cm³ |
耐久努氏硬度 | 112 kgf/mm² |
莫氏硬度 | 8.5 |
杨氏模量 | 67 GPa |
断裂模量 | 55 MPa |
取向 | <111>or <100> |
激光波长 | 2150 – 2600 nm |
发射线宽 | <1 nm |
发射截面(@ 1064nm) | 9×10-19 cm² |
本征损失@ 1064nm | <0.003 cm-1 |
折射率(n)@ 1650nm | 2.455 |
热光学系数(dn / dT)@nm | 61×10-6/ºC |
案例
特点
应用
参考文献
新闻
案例
Cr:ZnSe晶体案例(一)
规格:2*4*5 mm;
光学抛光:2*4 mm 面 (双面)
特点
- 广泛的可调性(从2.1-3.1μm发射)
- 宽吸收带
- 大增益截面(σ发射〜9 × 10-19 cm2)
- 激发态吸收的最小问题(不允许上能级激发态的自旋跃迁)
- 高导热性比YAG好(ZnSe为18w/m·K,YAG为13w/m·K)
- 高IR(0.6-20μm)透明度
应用
- 手术
- 遥感
- 牙科学
- 自由空间通讯
- 军事应用
参考文献
[1] Dai T Y , Xu X G , Li X L , et al. 41kHz repetition rate passively Q-switched Ho:YAP laser with Cr:ZnS as a saturable absorber[J]. Optik – International Journal for Light and Electron Optics, 2016:4844-4847. |
[2] Dai Y , Li Y , Zou X , et al. Compact passively Q-switched Tm:YLF laser with a polycrystalline Cr:ZnS saturable absorber[J]. Optics & Laser Technology, 2014, 57:202-205. |
[3] Hoemmerich U , Jones I K , Nyein E E , et al. Comparison of the optical properties of diffusion-doped polycrystalline Cr:ZnSe and Cr:CdTe windows[J]. Journal of Crystal Growth, 2006, 287(2):450-453. |
[4] Alphan, Sennaroglu, and, et al. Concentration dependence of fluorescence and lasing efficiency in Cr2+:ZnSe lasers[J]. Optical Materials, 2007. |
[5] Tablero C . Impurity–host interactions in Cr-substituted ZnSe[J]. Solid State Communications, 2007, 143(8-9):399-402. |
[6] Kim C , Martyshkin D V , Fedorov V V , et al. Middle-infrared random lasing of Cr 2+ doped ZnSe, ZnS, CdSe powders, powders imbedded in polymer liquid solutions, and polymer films[J]. Optics Communications, 2009, 282(10):2049-2052. |
[7] Fedorov V V , Konak T , Dashdorj J , et al. Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals[J]. Optical Materials, 2014, 37:262-266. |
[8] Qamar F Z , King T A . Passive Q-switching of the Tm-silica fibre laser near 2 μm by a Cr 2+:ZnSe saturable absorber crystal[J]. Optics Communications, 2005, 248(4-6):501-508. |
[9] Wang X Y , Chen Z , Zhang L , et al. Preparation, spectroscopic characterization and energy transfer investigation of iron-chromium diffusion co-doped ZnSe for mid-IR laser applications[J]. Optical Materials, 2016, 54:234-237. |
[10] A.V Podlipensky and V.G Shcherbitsky and N.V Kuleshov and V.P Mikhailov and V.I Levchenko and V.N Yakimovich and L.I Postnova and V.I Konstantinov. Pulsed laser operation of diffusion-doped Cr2+:ZnSe[J]. Optics Communications, 1999. |
[11] Min, Chen, Hongmei, et al. Reparative effect of diffusion process on host defects in Cr2+ doped ZnS/ZnSe[J]. Journal of Alloys & Compounds, 2014. |
[12] S Kück. Spectroscopy and laser characteristics of Cr 2+-doped chalcogenide crystals — overview and recent results[J]. Journal of Alloys & Compounds, 2002, 341(1-2):28-33. |
[13] Demirbas U , Sennaroglu A , Somer M . Synthesis and characterization of diffusion-doped Cr2+:ZnSe and Fe2+:ZnSe[J]. Optical Materials, 2006, 28(3):231-240. |
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