参数
浓度公差(atm%) | 2-4 at.% |
晶格常数 | 4~5 |
取向 | a-切口,其他方向也可用 |
平行性 | <10” |
垂直性 | <5” |
表面质量 | 10-5 刮痕 & 凹陷 |
波前失真 | λ/8 @ 633nm |
表面平整度 | λ/10 @ 633nm |
通光孔径 | 95% |
长度公差 | ±0.1 mm |
面尺寸公差 | +0/-0,1 mm |
防护倒角 | <0,1 mm 在45˚ |
损伤阈值 | over 15J/cm2 TEM00, 10ns, 10Hz |
晶体结构 | 四方晶系 |
晶格常数 | a=5.16Å; c=10.85Å |
密度 | 3.99 g/cm³ |
熔点 | 819℃ |
导热系数 | 6 Wm-1K-1 |
热光学系数(dn / dT) | π = 4.3 x 10-6 x °K-1; σ = 2.0 x 10-6 x °K-1 |
热膨胀率/(10-6·K-1 @ 25°C) | 10.1×10-6 (//c) K-1, 14.3×10-6((//a) K-1 |
硬度(莫氏) | 5 |
剪切模量/ Gpa | 85 |
比热 | 0.79 J/gK |
泊松比 | 0.3 |
激光跃迁 | 3F4→3H6 |
激光波长 | π:1880 nm; σ:1908 nm |
峰吸收截面 | 0.55×10-20 cm2 |
峰值波长处的吸收带宽 | 16 nm |
吸收峰波长 | 792 nm |
3F4 铥能级的寿命 | 16 ms |
量子效率 | 2 |
非线性指标n2 | 0.6 x 10-13 |
光学质量 | < 0.3 x 10-5 |
折射率@ 1064 nm | no=1.448, ne=1.470 |
激光引起的损伤阈值 | >10 J/cm2@1900 nm, 10 ns |
涂层 | 在两边R<0,5% @792 nm + R<0,15% @1800-1960 nm; 还可提供定制涂层 |
案例
特点
应用
参考文献
新闻
案例
Tm:YLF晶体案例(一)
规格:Ø3×12 mm,Ø3×6 mm;
S1/S2: AR(R<0,5%)792 nm + AR(R<0,2%)1800-1960 nm
特点
- 非线性折射率低
- 热光常数低
- 极化损耗低
- 上能级荧光寿命长
- 上转换效应小
- 敏化离子无吸收损失
应用
- 医学诊断与治疗
- 激光雷达
- 激光测距
- 电光对策
- 激光遥感
- 激光成像
- 光信号处理
- 材料加工
参考文献
[1] Yue, Chen, Xin-Yu, et al. A compact high efficient Tm:YLF laser dual-end-pumped by an equidirectional-polarizing fiber coupled laser diode at room temperature[J]. Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic, 2018, 158:1553-1557. |
[2] Cui Z , Yao B Q , Duan X M , et al. A graphene saturable absorber for a Tm:YLF pumped passively Q-switched Ho:LuAG laser[J]. Optik – International Journal for Light and Electron Optics, 2016, 127(5):3082-3085. |
[3] Duan X M , Ding Y , Dai T Y , et al. A linewidth-narrowed Tm:YLF laser using by two etalons[J]. Optik – International Journal for Light and Electron Optics, 2015, 126(19):2108-2109. |
[4] Wang Y P , Dai T Y , Wu J , et al. A Q-switched Ho: YAG laser with double anti-misalignment corner cubes pumped by a diode-pumped Tm: YLF laser[J]. Infrared Physics & Technology, 2018, 91:8-11. |
[5] Dai Y , Li Y , Zou X , et al. Compact passively Q-switched Tm:YLF laser with a polycrystalline Cr:ZnS saturable absorber[J]. Optics & Laser Technology, 2014, 57:202-205. |
[6] Zhang B , Li L , He C , et al. Compact self-Q-switched Tm:YLF laser at 1.91 μm[J]. Optics & Laser Technology, 2018, 100. |
[7] Antipov O L , Zakharov N G , Fedorov M , et al. Cutting effects induced by 2 μm laser radiation of cw Tm:YLF and cw and Q-switched Ho:YAG lasers on ex-vivo tissue[J]. Medical Laser Application, 2011, 26(2):67-75. |
[8] Linjun, Li, Xining, et al. High beam quality passively Q-switched operation of a slab Tm:YLF laser with a MoS2 saturable absorber mirror – ScienceDirect[J]. Optics & Laser Technology, 2019, 112:39-42. |
[9] Duan X M , Ding Y , Yao B Q , et al. High power acousto-optical Q-switched Tm:YLF-pumped Ho:GdVO4 laser[J]. Optik – International Journal for Light and Electron Optics, 2018, 163:39-42. |
[10] Ding Y , Han L , Yao B Q , et al. High power Tm:YLF bulk laser wavelength-stabilized by two F-P etalons[J]. Optik – International Journal for Light and Electron Optics, 2015, 126(9-10):990-992. |
[11] Y, Ding, D. X , et al. High power Tm:YLF laser operating at 1.94 μm[J]. Optik International Journal for Light & Electron Optics, 2015. |
[12] Yang X T , Mu Y L , Zhao N B . Ho:SSO solid-state saturable-absorber Q switch for pulsed Ho:YAG laser resonantly pumped by a Tm:YLF laser[J]. Optics & Laser Technology, 2018, 107:398-401. |
[13] Yokozawa T , Izawa J , Hara H . Mode control of a Tm:YLF microchip laser by a multiple resonator[J]. Optics Communications, 1998, 145( 1–6):98-100. |
[14] Hecht H , Burshtein Z , Katzir A , et al. Passive Q-switching of a Tm:YLF laser with a Co2+ doped silver halide saturable absorber[J]. Optical Materials, 2017, 64:64-69. |
[15] Razumova I , Tkachuk A , Nikitichev A , et al. Spectral-luminescent properties of Tm:YLF crystal[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 1995, 225(1-2):129-132. |
[16] Kalachev Y L , Mihailov V A , Podreshetnikov V V , et al. The study of a Tm:YLF laser pumped by a Raman shifted Erbium fiber laser at 1678 nm[J]. Optics Communications, 2011, 284(13):3357-3360. |
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